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MJD200G

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MJD200G

MJD200G

Image is for reference, please contact us to get the real picture

Part No :

MJD200G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN 25V 5A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
332418000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
MJD200G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:1.8V @ 1A, 5A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:45 @ 2A, 1V
Power - Max:1.4 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
MJD200G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD200G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD200G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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