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SNSS35200MR6T1G

SNSS35200MR6T1G

LOW VCE(SAT) TRANSISTOR, PNP, 35

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SNSS35200MR6T1G

SNSS35200MR6T1G

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Part No :

SNSS35200MR6T1G

Manufacturer
Rochester Electronics
Description
LOW VCE(SAT) TRANSISTOR, PNP, 35
Catalog
Transistors - Bipolar (BJT) - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 26 - Apr 30 2025
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):35 V
Vce Saturation (Max) @ Ib, Ic:310mV @ 20mA, 2A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1.5A, 1.5V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:SOT-23-6
Supplier Device Package:6-TSOP
SNSS35200MR6T1G is available at GangBo-ic.com, Please review product page below for detailed information, including SNSS35200MR6T1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SNSS35200MR6T1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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