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2N4123

2N4123

T-NPN SI- GEN PUR AMP

2N4123

2N4123

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Part No :

2N4123

Manufacturer
NTE Electronics, Inc.
Description
T-NPN SI- GEN PUR AMP
Catalog
Transistors - Bipolar (BJT) - Single
Availability
17046 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
2N4123 PDF
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 2mA, 1V
Power - Max:350 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92
2N4123 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N4123 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N4123 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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