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BUT11ATU

BUT11ATU

POWER BIPOLAR TRANSISTOR

Q-6800P0005006I

Q-6800P0005006I

SMA-SP/HDBNC-SJB G316 6I

BUT11ATU

BUT11ATU

Image is for reference, please contact us to get the real picture

Part No :

BUT11ATU

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
98750 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
BUT11ATU PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):450 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:100 W
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
BUT11ATU is available at GangBo-ic.com, Please review product page below for detailed information, including BUT11ATU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BUT11ATU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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