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KSD560RTU

KSD560RTU

POWER BIPOLAR TRANSISTOR

KSD560RTU

KSD560RTU

Image is for reference, please contact us to get the real picture

Part No :

KSD560RTU

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
16721 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 25 - Jan 29 2025
PDF
KSD560RTU PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 3mA, 3A
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 3A, 2V
Power - Max:1.5 W
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
KSD560RTU is available at GangBo-ic.com, Please review product page below for detailed information, including KSD560RTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for KSD560RTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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