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TPC9.1AHM3_A/H

TPC9.1AHM3_A/H

TVS DIODE 7.78V 13.4V TO277A

NSV20101JT1G

NSV20101JT1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

NSV20101JT1G

NSV20101JT1G

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Part No :

NSV20101JT1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single
Availability
66000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
NSV20101JT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
Power - Max:255 mW
Frequency - Transition:350MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-89, SOT-490
Supplier Device Package:SC-89-3
NSV20101JT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSV20101JT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSV20101JT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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