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NJVMJD44E3T4G

NJVMJD44E3T4G

POWER BIPOLAR TRANSISTOR, 10A, N

NJVMJD44E3T4G

NJVMJD44E3T4G

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Part No :

NJVMJD44E3T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 10A, N
Catalog
Transistors - Bipolar (BJT) - Single
Availability
147214 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NJVMJD44E3T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2V @ 20mA, 10A
Current - Collector Cutoff (Max):10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 5V
Power - Max:1.75 W
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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