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NJVNJD2873T4G

NJVNJD2873T4G

POWER BIPOLAR TRANSISTOR, 2A, 50

NJVNJD2873T4G

NJVNJD2873T4G

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Part No :

NJVNJD2873T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 2A, 50
Catalog
Transistors - Bipolar (BJT) - Single
Availability
41300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 22 - Sep 26 2024
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 50mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 500mA, 2V
Power - Max:1.68 W
Frequency - Transition:65MHz
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVNJD2873T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVNJD2873T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVNJD2873T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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