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2N5550

2N5550

Image is for reference, please contact us to get the real picture

Part No :

2N5550

Manufacturer
NTE Electronics, Inc.
Description
T-NPN SI- HIV AMP
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10625 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 08 - Apr 12 2025
PDF
2N5550 PDF
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):140 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
Power - Max:625 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
2N5550 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N5550 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N5550 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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