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2N6487

2N6487

NPN EPITAXIAL SILICON TRANSISTOR

2N6487

2N6487

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Part No :

2N6487

Manufacturer
Rochester Electronics
Description
NPN EPITAXIAL SILICON TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
12904 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
2N6487 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3.5V @ 5A, 15A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 5A, 4V
Power - Max:1.8 W
Frequency - Transition:5MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
2N6487 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6487 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6487 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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