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2N6667

2N6667

T-PNP SI-GEN PUR AMP

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2N6667

2N6667

Image is for reference, please contact us to get the real picture

Part No :

2N6667

Manufacturer
NTE Electronics, Inc.
Description
T-PNP SI-GEN PUR AMP
Catalog
Transistors - Bipolar (BJT) - Single
Availability
10708 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 22 - Mar 26 2025
PDF
2N6667 PDF
Type Description
Series:-
Package:Bag
Part Status:Active
Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 3V
Power - Max:2 W
Frequency - Transition:-
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
2N6667 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6667 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6667 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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