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SNSS20101JT1G

SNSS20101JT1G

20V UPN LOW VCE(SAT)

SNSS20101JT1G

SNSS20101JT1G

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Part No :

SNSS20101JT1G

Manufacturer
Rochester Electronics
Description
20V UPN LOW VCE(SAT)
Catalog
Transistors - Bipolar (BJT) - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
Power - Max:225 mW
Frequency - Transition:350MHz
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:SC-89, SOT-490
Supplier Device Package:SC-89-3
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