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NJVMJD31CT4G

NJVMJD31CT4G

3.0 A, 100 V NPN BIPOLAR POWER T

NJVMJD31CT4G

NJVMJD31CT4G

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Part No :

NJVMJD31CT4G

Manufacturer
Rochester Electronics
Description
3.0 A, 100 V NPN BIPOLAR POWER T
Catalog
Transistors - Bipolar (BJT) - Single
Availability
186351 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 10 - Jan 14 2025
Type Description
Series:Automotive, AEC-Q101
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD31CT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD31CT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD31CT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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