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FJP2160DTU

FJP2160DTU

POWER BIPOLAR TRANSISTOR

FJP2160DTU

FJP2160DTU

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Part No :

FJP2160DTU

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Single
Availability
17469 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
FJP2160DTU PDF
Type Description
Series:ESBC™
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):800 V
Vce Saturation (Max) @ Ib, Ic:750mV @ 330mA, 1A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 400mA, 3V
Power - Max:100 W
Frequency - Transition:5MHz
Operating Temperature:-55°C ~ 125°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
FJP2160DTU is available at GangBo-ic.com, Please review product page below for detailed information, including FJP2160DTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FJP2160DTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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