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MJD44H11G

MJD44H11G

POWER BIPOLAR TRANSISTOR, 8A, 80

MJD44H11G

MJD44H11G

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Part No :

MJD44H11G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 8A, 80
Catalog
Transistors - Bipolar (BJT) - Single
Availability
45353 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
MJD44H11G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
MJD44H11G is available at GangBo-ic.com, Please review product page below for detailed information, including MJD44H11G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MJD44H11G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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