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NJVMJD32T4G

NJVMJD32T4G

POWER BIPOLAR TRANSISTOR, 3A, PN

NJVMJD32T4G

NJVMJD32T4G

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Part No :

NJVMJD32T4G

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, 3A, PN
Catalog
Transistors - Bipolar (BJT) - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 24 - Jan 28 2025
PDF
NJVMJD32T4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1.2V @ 375mA, 3A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
Power - Max:1.56 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVMJD32T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVMJD32T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVMJD32T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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