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2N2907AE4

2N2907AE4

DIE TRANS PNP MED PWR GEN PURP T

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SL1G-AQ

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2N2907AE4

2N2907AE4

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Part No :

2N2907AE4

Manufacturer
Roving Networks / Microchip Technology
Description
DIE TRANS PNP MED PWR GEN PURP T
Catalog
Transistors - Bipolar (BJT) - Single
Availability
031703 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
2N2907AE4 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:500 mW
Frequency - Transition:-
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-206AA, TO-18-3 Metal Can
Supplier Device Package:TO-18
2N2907AE4 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N2907AE4 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N2907AE4 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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