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NJD35N04T4G

NJD35N04T4G

TRANS NPN DARL 350V 4A DPAK

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NJD35N04T4G

NJD35N04T4G

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Part No :

NJD35N04T4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 350V 4A DPAK
Catalog
Transistors - Bipolar (BJT) - Single
Availability
361636 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
NJD35N04T4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Power - Max:45 W
Frequency - Transition:90MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJD35N04T4G is available at GangBo-ic.com, Please review product page below for detailed information, including NJD35N04T4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJD35N04T4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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