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NJVNJD35N04G

NJVNJD35N04G

TRANS NPN DARL 350V 4A DPAK-4

NJVNJD35N04G

NJVNJD35N04G

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Part No :

NJVNJD35N04G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS NPN DARL 350V 4A DPAK-4
Catalog
Transistors - Bipolar (BJT) - Single
Availability
121612 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 04 - Feb 08 2025
PDF
NJVNJD35N04G PDF
Type Description
Series:-
Package:Tube
Part Status:Active
Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):350 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 20mA, 2A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 2A, 2V
Power - Max:45 W
Frequency - Transition:90MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NJVNJD35N04G is available at GangBo-ic.com, Please review product page below for detailed information, including NJVNJD35N04G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NJVNJD35N04G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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