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2SA1312GRTE85LF

2SA1312GRTE85LF

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2SA1312GRTE85LF

2SA1312GRTE85LF

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Part No :

2SA1312GRTE85LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PNP 120V 0.1A S-MINI
Catalog
Transistors - Bipolar (BJT) - Single
Availability
641464 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
2SA1312GRTE85LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):120 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:150 mW
Frequency - Transition:100MHz
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:S-Mini
2SA1312GRTE85LF is available at GangBo-ic.com, Please review product page below for detailed information, including 2SA1312GRTE85LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2SA1312GRTE85LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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