TRANS PREBIAS NPN 300MW TO92-3
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100 mA |
Voltage - Collector Emitter Breakdown (Max): | 40 V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250 MHz |
Power - Max: | 300 mW |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FJN4312RBUSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS PNP 300MW TO92-3 |
|
UNR32A100LPanasonic |
TRANS PREBIAS NPN 100MW SSSMINI3 |
|
UNR921BG0LPanasonic |
TRANS PREBIAS NPN 125MW SSMINI3 |
|
PDTC123JK,115NXP Semiconductors |
TRANS PREBIAS NPN 250MW SMT3 |
|
UNR91ALG0LPanasonic |
TRANS PREBIAS PNP 125MW SSMINI3 |
|
UNRL21500APanasonic |
TRANS PREBIAS NPN 150MW ML4-N1 |
|
FJNS3213RBUSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S |
|
UNR31A100LPanasonic |
TRANS PREBIAS PNP 100MW SSSMINI3 |
|
UNR9115G0LPanasonic |
TRANS PREBIAS PNP 125MW SSMINI3 |
|
UNR511F00LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
PBRN123ES,126NXP Semiconductors |
TRANS PREBIAS NPN 0.7W TO92-3 |
|
UNR511LG0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
DDTA124TKA-7-FZetex Semiconductors (Diodes Inc.) |
TRANS PREBIAS PNP 200MW SC59-3 |