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FJV3112RMTF

FJV3112RMTF

TRANS PREBIAS NPN 200MW SOT23-3

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6014L SL002

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FJV3112RMTF

FJV3112RMTF

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Part No :

FJV3112RMTF

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS PREBIAS NPN 200MW SOT23-3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
118111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 03 - Mar 07 2025
PDF
FJV3112RMTF PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
FJV3112RMTF is available at GangBo-ic.com, Please review product page below for detailed information, including FJV3112RMTF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FJV3112RMTF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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