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NSBA114YF3T5G

NSBA114YF3T5G

SMALL SIGNAL BIPOLAR TRANSISTOR,

NSBA114YF3T5G

NSBA114YF3T5G

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Part No :

NSBA114YF3T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
456000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
NSBA114YF3T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:254 mW
Mounting Type:Surface Mount
Package / Case:SOT-1123
Supplier Device Package:SOT-1123
NSBA114YF3T5G is available at GangBo-ic.com, Please review product page below for detailed information, including NSBA114YF3T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSBA114YF3T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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