SMALL SIGNAL BIPOLAR TRANSISTOR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100 mA |
Voltage - Collector Emitter Breakdown (Max): | 50 V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | - |
Power - Max: | 150 mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DRA2115G0LPanasonic |
TRANS PREBIAS PNP 200MW MINI3 |
|
MMBTRC104SSDiotec Semiconductor |
DIGITAL TR SOT-23 50V 100MA |
|
NSBC144EF3T5GRochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR, |
|
RN1114MFV,L3FToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 50V 0.1A VESM |
|
PDTC115EMB,315Rochester Electronics |
PDTC115E - NPN RESISTOR-EQUIPPED |
|
FJNS4206RTARochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
DTD143ECT216ROHM Semiconductor |
TRANS PREBIAS NPN 200MW SST3 |
|
DRA3115G0LPanasonic |
TRANS PREBIAS PNP 100MW SSSMINI3 |
|
RN1130MFV,L3FToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 50V 0.1A VESM |
|
DTC113ZMT2LROHM Semiconductor |
DTC113ZM IS AN DIGITAL TRANSISTO |
|
PDTC144ET,215Nexperia |
TRANS PREBIAS NPN 50V TO236AB |
|
RN1409,LFToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 50V 0.1A SMINI |
|
MMUN2113LT3Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |