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NSVMMUN2132LT1G

NSVMMUN2132LT1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

NSVMMUN2132LT1G

NSVMMUN2132LT1G

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Part No :

NSVMMUN2132LT1G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
111000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
NSVMMUN2132LT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
NSVMMUN2132LT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMMUN2132LT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMMUN2132LT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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