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RN2110MFV,L3F

RN2110MFV,L3F

Image is for reference, please contact us to get the real picture

Part No :

RN2110MFV,L3F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
943094 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
RN2110MFV,L3F PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
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