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DTD113ZUT106

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DTD113ZUT106

DTD113ZUT106

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Part No :

DTD113ZUT106

Manufacturer
ROHM Semiconductor
Description
TRANS PREBIAS NPN 200MW UMT3
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
14144 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 02 - Dec 06 2024
PDF
DTD113ZUT106 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:200 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:UMT3
DTD113ZUT106 is available at GangBo-ic.com, Please review product page below for detailed information, including DTD113ZUT106 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DTD113ZUT106 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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