SMALL SIGNAL BIPOLAR TRANSISTOR,
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100 mA |
Voltage - Collector Emitter Breakdown (Max): | 50 V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | - |
Power - Max: | 338 mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PDTC143ZE,115Rochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
DTC043EMT2LROHM Semiconductor |
TRANS PREBIAS NPN 50V VMT3 |
|
MUN2131T1GRochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR, |
|
RN1102MFV,L3FToshiba Electronic Devices and Storage Corporation |
TRANS PREBIAS NPN 50V 0.1A VESM |
|
FJV4103RMTFRochester Electronics |
SMALL SIGNAL BIPOLAR TRANSISTOR |
|
DRA2144V0LPanasonic |
TRANS PREBIAS PNP 200MW MINI3 |
|
PDTC123ETVLNexperia |
PDTC123ET/SOT23/TO-236AB |
|
BCR183E6327HTSA1IR (Infineon Technologies) |
TRANS PREBIAS PNP 50V SOT23-3 |
|
PDTA113EM,315Rochester Electronics |
NOW NEXPERIA PDTA113EM - SMALL S |
|
NSVDTA143ZET1GSanyo Semiconductor/ON Semiconductor |
TRANS PNP 50V BIPOLAR SC75-3 |
|
PDTA113EMB,315Rochester Electronics |
NOW NEXPERIA PDTA113EMB - SMALL |
|
DRA5144T0LPanasonic |
TRANS PREBIAS PNP 150MW SMINI3 |
|
MUN5113T1GSanyo Semiconductor/ON Semiconductor |
TRANS PREBIAS PNP 50V SC70-3 |