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RN2102MFV,L3F(CT

RN2102MFV,L3F(CT

TRANS PREBIAS PNP 50V 0.1A VESM

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RN2102MFV,L3F(CT

RN2102MFV,L3F(CT

Image is for reference, please contact us to get the real picture

Part No :

RN2102MFV,L3F(CT

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
14435 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
RN2102MFV,L3F(CT is available at GangBo-ic.com, Please review product page below for detailed information, including RN2102MFV,L3F(CT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN2102MFV,L3F(CT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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