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NSVMMUN2135LT1G

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Part No :: NSVMMUN2135LT1G

Manufacturer: Rochester Electronics

Description: SMALL SIGNAL BIPOLAR TRANSISTOR

Catalog: Transistors - Bipolar (BJT) - Single, Pre-Biased

Availability: 141500 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 13 - Nov 17 2025

PDF: NSVMMUN2135LT1G PDF

Type	Description
Series:	Automotive, AEC-Q101
Package:	Bulk
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	246 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

NSVMMUN2135LT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMMUN2135LT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMMUN2135LT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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