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NSVMMUN2233LT3G

NSVMMUN2233LT3G

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NSVMMUN2233LT3G

NSVMMUN2233LT3G

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Part No :

NSVMMUN2233LT3G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS PREBIAS NPN 0.246W SOT23
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
40000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NSVMMUN2233LT3G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
NSVMMUN2233LT3G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVMMUN2233LT3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVMMUN2233LT3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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