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RN2310,LF

RN2310,LF

TRANS PREBIAS PNP 50V 0.1A USM

RN2310,LF

RN2310,LF

Image is for reference, please contact us to get the real picture

Part No :

RN2310,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS PNP 50V 0.1A USM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
272127 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
RN2310,LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM
RN2310,LF is available at GangBo-ic.com, Please review product page below for detailed information, including RN2310,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN2310,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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