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RN1131MFV(TL3,T)

RN1131MFV(TL3,T)

TRANS PREBIAS NPN 50V 0.1A VESM

RN1131MFV(TL3,T)

RN1131MFV(TL3,T)

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Part No :

RN1131MFV(TL3,T)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
RN1131MFV(TL3,T) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):100 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
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