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RN1106MFV,L3F

RN1106MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM

RN1106MFV,L3F

RN1106MFV,L3F

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Part No :

RN1106MFV,L3F

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
15250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
RN1106MFV,L3F PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
RN1106MFV,L3F is available at GangBo-ic.com, Please review product page below for detailed information, including RN1106MFV,L3F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1106MFV,L3F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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