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RN1309(TE85L,F)

RN1309(TE85L,F)

Image is for reference, please contact us to get the real picture

Part No :

RN1309(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A USM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
10928 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2025
PDF
RN1309(TE85L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:USM
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