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NSBA113EF3T5G

NSBA113EF3T5G

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NSBA113EF3T5G

NSBA113EF3T5G

Image is for reference, please contact us to get the real picture

Part No :

NSBA113EF3T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
320000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
NSBA113EF3T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:254 mW
Mounting Type:Surface Mount
Package / Case:SOT-1123
Supplier Device Package:SOT-1123
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