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SiT3372AI-4E2-28NG125.000000Y

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XTAL OSC VCXO 125.0000MHZ HCSL

NSBC113EF3T5G

NSBC113EF3T5G

SMALL SIGNAL BIPOLAR TRANSISTOR,

NSBC113EF3T5G

NSBC113EF3T5G

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Part No :

NSBC113EF3T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
320000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 24 - Sep 28 2024
PDF
NSBC113EF3T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:254 mW
Mounting Type:Surface Mount
Package / Case:SOT-1123
Supplier Device Package:SOT-1123
NSBC113EF3T5G is available at GangBo-ic.com, Please review product page below for detailed information, including NSBC113EF3T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSBC113EF3T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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