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PDTD113EUF

PDTD113EUF

NOW NEXPERIA PDTD113EUF - SMALL

PDTD113EUF

PDTD113EUF

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Part No :

PDTD113EUF

Manufacturer
Rochester Electronics
Description
NOW NEXPERIA PDTD113EUF - SMALL
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
46766 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
PDTD113EUF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):1 kOhms
Resistor - Emitter Base (R2):1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:225 MHz
Power - Max:300 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
PDTD113EUF is available at GangBo-ic.com, Please review product page below for detailed information, including PDTD113EUF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for PDTD113EUF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

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