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NSBA123JF3T5G

NSBA123JF3T5G

SMALL SIGNAL BIPOLAR TRANSISTOR,

NSBA123JF3T5G

NSBA123JF3T5G

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Part No :

NSBA123JF3T5G

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Availability
160000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NSBA123JF3T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:254 mW
Mounting Type:Surface Mount
Package / Case:SOT-1123
Supplier Device Package:SOT-1123
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