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MT3S111TU,LF

MT3S111TU,LF

RF SIGE NPN BIPOLAR TRANSISTOR N

MT3S111TU,LF

MT3S111TU,LF

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Part No :

MT3S111TU,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF SIGE NPN BIPOLAR TRANSISTOR N
Catalog
Transistors - Bipolar (BJT) - RF
Availability
13372 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):6V
Frequency - Transition:10GHz
Noise Figure (dB Typ @ f):0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain:12.5dB
Power - Max:800mW
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
Current - Collector (Ic) (Max):100mA
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, Flat Lead
Supplier Device Package:UFM
MT3S111TU,LF is available at GangBo-ic.com, Please review product page below for detailed information, including MT3S111TU,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT3S111TU,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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