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HN3C10FUTE85LF

HN3C10FUTE85LF

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HN3C10FUTE85LF

HN3C10FUTE85LF

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Part No :

HN3C10FUTE85LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS 2 NPN 12V 7GHZ US6
Catalog
Transistors - Bipolar (BJT) - RF
Availability
10111 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 21 - May 25 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Gain:11.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
HN3C10FUTE85LF is available at GangBo-ic.com, Please review product page below for detailed information, including HN3C10FUTE85LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN3C10FUTE85LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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