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HN3C10FUTE85LF

HN3C10FUTE85LF

RF TRANS 2 NPN 12V 7GHZ US6

HN3C10FUTE85LF

HN3C10FUTE85LF

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Part No :

HN3C10FUTE85LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS 2 NPN 12V 7GHZ US6
Catalog
Transistors - Bipolar (BJT) - RF
Availability
10111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Gain:11.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
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