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HN1B04FE-GR,LF

HN1B04FE-GR,LF

TRANS NPN/PNP 50V 0.15A ES6

HN1B04FE-GR,LF

HN1B04FE-GR,LF

Image is for reference, please contact us to get the real picture

Part No :

HN1B04FE-GR,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS NPN/PNP 50V 0.15A ES6
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
11870 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
HN1B04FE-GR,LF PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:100mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
HN1B04FE-GR,LF is available at GangBo-ic.com, Please review product page below for detailed information, including HN1B04FE-GR,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN1B04FE-GR,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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