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NSVEMT1DXV6T5G

NSVEMT1DXV6T5G

DUAL PNP BIPOLAR TRANSISTOR

NSVEMT1DXV6T5G

NSVEMT1DXV6T5G

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Part No :

NSVEMT1DXV6T5G

Manufacturer
Rochester Electronics
Description
DUAL PNP BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
18000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
NSVEMT1DXV6T5G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):60V
Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
Current - Collector Cutoff (Max):500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
Power - Max:500mW
Frequency - Transition:140MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
NSVEMT1DXV6T5G is available at GangBo-ic.com, Please review product page below for detailed information, including NSVEMT1DXV6T5G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NSVEMT1DXV6T5G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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