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NCV1413BDR2G

NCV1413BDR2G

TRANS 7NPN DARL 50V 0.5A 16SOIC

NCV1413BDR2G

NCV1413BDR2G

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Part No :

NCV1413BDR2G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 7NPN DARL 50V 0.5A 16SOIC
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
10541 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
NCV1413BDR2G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:7 NPN Darlington
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
Power - Max:-
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:16-SOIC
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