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MC1413BDR2

MC1413BDR2

POWER BIPOLAR TRANSISTOR, NPN

MMZ2012-1-KIT

MMZ2012-1-KIT

Z 2012 1500-400MA 15-2000OHM

MC1413BDR2

MC1413BDR2

Image is for reference, please contact us to get the real picture

Part No :

MC1413BDR2

Manufacturer
Rochester Electronics
Description
POWER BIPOLAR TRANSISTOR, NPN
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
10635 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
MC1413BDR2 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:7 NPN Darlington
Current - Collector (Ic) (Max):500mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 350mA, 2V
Power - Max:-
Frequency - Transition:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:16-SOIC (0.154", 3.90mm Width)
Supplier Device Package:16-SOIC
MC1413BDR2 is available at GangBo-ic.com, Please review product page below for detailed information, including MC1413BDR2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MC1413BDR2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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