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HN1B01FDW1T1

HN1B01FDW1T1

SMALL SIGNAL BIPOLAR TRANSISTOR

MTCDT-246L-US-EU-GB

MTCDT-246L-US-EU-GB

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HN1B01FDW1T1

HN1B01FDW1T1

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Part No :

HN1B01FDW1T1

Manufacturer
Rochester Electronics
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Catalog
Transistors - Bipolar (BJT) - Arrays
Availability
17980 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
HN1B01FDW1T1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):2µA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:380mW
Frequency - Transition:-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SC-74
HN1B01FDW1T1 is available at GangBo-ic.com, Please review product page below for detailed information, including HN1B01FDW1T1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN1B01FDW1T1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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