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RN2606(TE85L,F)

RN2606(TE85L,F)

Image is for reference, please contact us to get the real picture

Part No :

RN2606(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2PNP PREBIAS 0.3W SM6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
11030 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 28 - Mar 04 2025
PDF
RN2606(TE85L,F) PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200MHz
Power - Max:300mW
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SM6
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