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NSVMUN5212DW1T1G

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Part No :: NSVMUN5212DW1T1G

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: TRANS 2NPN PREBIAS 0.25W SOT363

Catalog: Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Availability: 26698 pieces

Shipped from: HK warehouse

Expected Shipping Date: Feb 27 - Mar 03 2025

PDF: NSVMUN5212DW1T1G PDF

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22kOhms
Resistor - Emitter Base (R2):	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	250mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363

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