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RN1706,LF

RN1706,LF

NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO

RN1706,LF

RN1706,LF

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Part No :

RN1706,LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:USV
RN1706,LF is available at GangBo-ic.com, Please review product page below for detailed information, including RN1706,LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RN1706,LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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