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SMUN5112DW1T1G

SMUN5112DW1T1G

TRANS 2PNP PREBIAS 0.25W SOT363

SMUN5112DW1T1G

SMUN5112DW1T1G

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Part No :

SMUN5112DW1T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2PNP PREBIAS 0.25W SOT363
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Availability
150000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 27 - Mar 03 2025
PDF
SMUN5112DW1T1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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